FABRICATION AND CHARACTERISTICS OF SCHOTTKY GATED FIELD-EFFECT TRANSISTORS UTILIZING POLY(1,4-NAPHTHALENE VINYLENE) AND POLY(PARA-PHENYLENE VINYLENE)

被引：21

作者：

OHMORI, Y ^{[1
]}

MURO, K ^{[1
]}

ONODA, M ^{[1
]}

YOSHINO, K ^{[1
]}

机构：

[1] HIMEJI INST TECHNOL,FAC ENGN,HIMEJI,HYOGO 67122,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期

关键词：

POLY(ARYLENE VINYLENE); POLY(1,4-NAPHTHALENE VINYLENE); POLY(PARA-PHENYLENE VINYLENE); CONDUCTING POLYMER; FIELD-EFFECT TRANSISTOR (FET); METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;

D O I：

10.1143/JJAP.31.L646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication and characteristics of Schottky gated poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene) field-effect transistors (FETs) have been reported for the first time. The FET has been realized utilizing the polymer film formed on a Schottky gated electrode deposited upon a glass substrate. From FET characteristics, the carrier concentrations and carrier mobilities are evaluated for poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene). Electrical properties are discussed on the basis of the FET characteristics for the nominally undoped samples.

引用

页码：L646 / L648

页数：3

共 12 条

[1] PREPARATION AND ELECTRICAL-CONDUCTIVITY OF POLY(1,4-NAPHTHALENE VINYLENE)
ANTOUN, S
GAGNON, DR
KARASZ, FE
LENZ, RW
[J]. JOURNAL OF POLYMER SCIENCE PART C-POLYMER LETTERS, 1986, 24 (10) : 503 - 509
[2] CHARACTERISTICS OF HETEROJUNCTION CONSISTING OF CONDUCTING POLYMERS OF POLYTHIOPHENE AND POLYPYRROLE
KANETO, K
TAKEDA, S
YOSHINO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L553 - L555
[3] MURASE I, 1984, POLYM COMMUN, V25, P327
[4] FABRICATION AND CHARACTERISTICS OF SCHOTTKY GATED POLY(3-ALKYLTHIOPHENE) FIELD-EFFECT TRANSISTORS
OHMORI, Y
TAKAHASHI, H
MURO, K
UCHIDA, M
KAWAI, T
YOSHINO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A): : L610 - L611
[5] GAS-SENSITIVE JUNCTION CHARACTERISTICS OF POLY(3-ALKYLTHIOPHENE) SCHOTTKY DIODES
OHMORI, Y
TAKAHASHI, H
KAWAI, T
YOSHINO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1849 - L1852
[6] GAS-SENSITIVE SCHOTTKY GATED FIELD-EFFECT TRANSISTORS UTILIZING POLY(3-ALKYLTHIOPHENE) FILMS
OHMORI, Y
TAKAHASHI, H
MURO, K
UCHIDA, M
KAWAI, T
YOSHINO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B): : L1247 - L1249
[7] INSITU ABSORPTION-SPECTRA MEASUREMENTS IN POLY(1,4-NAPHTHALENE VINYLENE) DURING ELECTROCHEMICAL DOPING
ONODA, M
MORITA, S
IWASA, T
NAKAYAMA, H
AMAKAWA, K
YOSHINO, K
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1991, 24 (07) : 1152 - 1157
[8] PALOHEIMO J, 1991, POLYM FIELD EFFECT T, P635
[9] SZE SM, 1981, PHYSICS SEMICONDUCTO, P316
[10] MACROMOLECULAR ELECTRONIC DEVICE - FIELD-EFFECT TRANSISTOR WITH A POLYTHIOPHENE THIN-FILM
TSUMURA, A
KOEZUKA, H
ANDO, T
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1210 - 1212

← 1 2 →