IMPLANTATION OF QUARTZ WITH HIGH-DOSE TITANIUM IONS AS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

A conductive layer was formed near the surface of a quartz sample by high dose titanium implantation. The chemical reactivity of the implanted Ti with SiO2 was studied by X-Ray Photoelectron Spectroscopy (XPS). As a result of ion implantation, in a very thin superficial zone, the Ti bonds to the oxygen in SiO2 freeing Si from its oxidized state and forms Ti-rich oxides (TiO and Ti2O3) and TiSix (or Si). The conductivity of the implanted quartz is due to this 25 ran thick layer of nearly constant composition formed beneath the surface (10 nm).