A SIMPLE EXPLANATION FOR THE APPARENT RELAXATION EFFECT ASSOCIATED WITH HOT-CARRIER PHENOMENON IN MOSFETS

被引：12

作者：

CUEVAS, P

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 12期

关键词：

D O I：

10.1109/55.20417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：627 / 629

页数：3

共 6 条

[1] RELAXATION EFFECTS IN NMOS TRANSISTORS AFTER HOT-CARRIER STRESSING [J].

DOYLE, BS ;

BOURCERIE, M ;

MARCHETAUX, JC ;

BOUDOU, A .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :234-236

[2] A SIMPLE METHOD TO EVALUATE DEVICE LIFETIME DUE TO HOT-CARRIER EFFECT UNDER DYNAMIC STRESS [J].

HORIUCHI, T ;

MIKOSHIBA, H ;

NAKAMURA, K ;

HAMANO, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :337-339

[3] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[4]

Toyoshima Y., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P786

[5] HOT-ELECTRON-INDUCED MOSFET DEGRADATION AT LOW-TEMPERATURES [J].

TZOU, JJ ;

YAO, CC ;

CHEUNG, R ;

CHAN, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :450-452

[6]

Weber W., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P390

← 1 →