HOT-ELECTRON-INDUCED MOSFET DEGRADATION AT LOW-TEMPERATURES

[1] TEMPERATURE-DEPENDENCE OF HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 148 - 150

[2] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385

[3] SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1127 - 1133

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[5] SAH CT, 1983, 1983 P INT S VLSI TS, P174

[6] SUNAGA T, 1982, APPL PHYS LETT, V50, P810

[7] SZE SM, PHYSICS SEMICONDUCTO

[8] Takeda E., 1983, International Electron Devices Meeting 1983. Technical Digest, P396

[9] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596

[10] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372

[1] TEMPERATURE-DEPENDENCE OF HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 148 - 150

[2] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385

[3] SUBSTRATE CURRENT DUE TO IMPACT IONIZATION IN MOS-FET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1127 - 1133

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[5] SAH CT, 1983, 1983 P INT S VLSI TS, P174

[6] SUNAGA T, 1982, APPL PHYS LETT, V50, P810

[7] SZE SM, PHYSICS SEMICONDUCTO

[8] Takeda E., 1983, International Electron Devices Meeting 1983. Technical Digest, P396

[9] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596

[10] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372