INTERFACE ROUGHNESS AND ASYMMETRY IN INAS/GASB SUPERLATTICES STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：160

作者：

FEENSTRA, RM ^{[1
]}

COLLINS, DA ^{[1
]}

TING, DZY ^{[1
]}

WANG, MW ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.72.2749

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

InAs/GaSb superlattices are studied in cross section by scanning tunneling microscopy and spectroscopy. Electron subbands in 42 angstrom thick InAs layers are clearly resolved in the spectra. Roughness of the superlattice interfaces is quantitatively measured. Interfaces of InAs grown on GaSb are found to be rougher, with different electronic properties, than those of GaSb on InAs, indicating some intermixing in the former case.

引用

收藏

页码：2749 / 2752

页数：4

相关论文

共 15 条

[1] CONTROL OF INTERFACE STOICHIOMETRY IN INAS/GASB SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BENNETT, BR ;

SHANABROOK, BV ;

WAGNER, RJ ;

DAVIS, JL ;

WATERMAN, JR .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :949-951

[2] ON THE INTERFACE STRUCTURE IN INAS/ALSB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BOLOGNESI, CR ;

SELA, I ;

IBBETSON, J ;

BRAR, B ;

KROEMER, H ;

ENGLISH, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :868-871

[3]

CARTENSEN H, 1987, 18TH P INT C PHYS SE, P125

[4] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF THE GROWTH OF INAS/GA1-XINXSB STRAINED-LAYER SUPERLATTICES [J].

COLLINS, DA ;

FU, TC ;

MCGILL, TC ;

CHOW, DH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1779-1783

[5]

FEENSTRA R, IN PRESS

[6] TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929

[7] DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS/GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES [J].

GWO, S ;

CHAO, KJ ;

SHIH, CK ;

SADRA, K ;

STREETMAN, BG .

PHYSICAL REVIEW LETTERS, 1993, 71 (12) :1883-1886

[8] MODIFICATION OF THE MICROROUGHNESS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/ALAS INTERFACES THROUGH CHANGES IN THE GROWTH TEMPERATURE [J].

KATZER, DS ;

GAMMON, D ;

SHANABROOK, BV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :800-802

[9] ELECTRONIC BAND-STRUCTURE OF FAR-INFRARED GA1-XINXSB/INAS SUPERLATTICES [J].

MILES, RH ;

SCHULMAN, JN ;

CHOW, DH ;

MCGILL, TC .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S102-S105

[10] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936