DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS/GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES

被引:54
作者
GWO, S
CHAO, KJ
SHIH, CK
SADRA, K
STREETMAN, BG
机构
[1] UNIV TEXAS, MICROELECTR RES CTR, AUSTIN, TX 78712 USA
[2] UNIV TEXAS, DEPT ELECT & COMP ENGN, AUSTIN, TX 78712 USA
关键词
D O I
10.1103/PhysRevLett.71.1883
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
By using the prototypical Al0.3Ga0.7As/GaAs system, we demonstrate the unique capability of scanning tunneling microscopy to directly map out detailed electronic structure across heterojunctions. Three novel applications are reported: (1) precise determination of band offsets, (2) measurement of asymmetrical electronic transition widths between the normal and inverted interfaces, and (3) mapping of multiple-valley band structures. Important implications of these results are discussed.
引用
收藏
页码:1883 / 1886
页数:4
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