SCANNING TUNNELING MICROSCOPY OF GAAS MULTIPLE PN JUNCTIONS

被引：37

作者：

GWO, S ^{[1
]}

SMITH, AR ^{[1
]}

SHIH, CK ^{[1
]}

SADRA, K ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV TEXAS, DEPT ELECT ENGN, AUSTIN, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.107682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy and spectroscopy is used to study GaAs multiple pn junction samples cleaved in ultrahigh vacuum. Direct topographic contrast over the pn junctions can be observed in the constant current imaging mode. The topographic height in the p-type regions appears much lower (by about 5 angstrom) than that in the n-type regions. Tunneling spectroscopy measurements show consistency with the assignment of the p- and n-type regions. We discuss a possible mechanism for the observed contrast.

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页码：1104 / 1106

页数：3

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