2-DIMENSIONAL IMAGING OF CLEAVED SI P-N-JUNCTIONS WITH 30-NM RESOLUTION USING A UHV SCANNING TUNNELING MICROSCOPE

First two-dimensional scanning tunneling microscope (STM) measurements on cleaved shallow silicon p-n junctions are presented. The used current imaging technique provides contrast between p- and n-type regions on biased junctions. The two-dimensional part of the junction is imaged and localized to within 30 nm. Both the cleaving of the junction and the STM measurements are performed in ultrahigh vacuum (UHV).