2-DIMENSIONAL PN-JUNCTION DELINEATION ON CLEAVED SILICON SAMPLES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE

被引：19

作者：

KORDIC, S

VANLOENEN, EJ

WALKER, AJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.586382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional scanning tunneling microscope (STM) measurements on cleaved interdigitated shallow pn junctions are presented. The two-dimensional part of the junction is localized to within 30 nm. The cleaving of the junctions and the STM measurements are performed in ultrahigh vacuum (UHV). STM measurements on pn junctions in air are also discussed. These measurements show that there is a relation between the magnitude of the tunneling current and the local impurity concentration of the sample. A qualitative model is presented that explains the observed effects.

引用

页码：496 / 501

页数：6

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