CURRENT IMAGING OF CLEAVED SILICON PN-JUNCTIONS WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE

被引：11

作者：

KORDIC, S

VANLOENEN, EJ

WALKER, AJ

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current imaging of cleaved two-dimensional silicon pn junctions with an ultrahigh vacuum scanning tunneling microscope is presented. In order to be able to distinguish between p-type material, n-type material, and the depletion region a voltage ramp is applied to the p side of the junction, while the voltage on the n side is constant. At the same time standard topography and stabilization current plots give no indication of the presence of the pn junctions. The I-V characteristics measured over different parts of the junctions are explained. The influence of the shape of the cleaved surface on the measurements is discussed.

引用

页码：3154 / 3156

页数：3

共 7 条

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