IMAGING OF PASSIVATED III-V-SEMICONDUCTOR SURFACES BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR

被引：22

作者：

DAGATA, JA

TSENG, W

BENNETT, J

SCHNEIR, J

HARARY, HH

机构：

[1] National Institute of Standards and Technology, Gaithersburg

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90437-O

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

A procedure is described for preparing stable GaAs and other III-V semiconductor surfaces for scanning tunneling microscope (STM) imaging under ambient conditions. The procedure involves the use of a dilute P2S5/(NH4)2S passivating solution, which produces a highly uniform, ultra-thin surface oxide. STM imaging with nanometer-scale resolution of a P2S5-passivated, AlxGa1-xAs/GaAs, x = 0.1-0.4, compositional superlattice and a variable-period Al0.51Ga0.49As/GaAs superlattice is used to illustrate some of the properties of this passivation method.

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页码：1288 / 1294

页数：7

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