1.5-MU-M INP/GAINASP LINEAR LASER ARRAY WITH 12 INDIVIDUALLY ADDRESSABLE ELEMENTS

被引:4
作者
KOSZI, LA
SEGNER, BP
TEMKIN, H
DAUTREMONTSMITH, WC
HUO, DTC
机构
关键词
D O I
10.1049/el:19880146
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:217 / 219
页数:3
相关论文
共 5 条
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[2]  
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KOSZI, LA ;
TEMKIN, H ;
CHIN, BH ;
NAPHOLTZ, SG ;
SEGNER, BP .
ELECTRONICS LETTERS, 1987, 23 (06) :284-286
[4]   A CLOSELY SPACED (50-MU-M) ARRAY OF 16 INDIVIDUALLY ADDRESSABLE BURIED HETEROSTRUCTURE GAAS-LASERS [J].
VANDERZIEL, JP ;
LOGAN, RA ;
MIKULYAK, RM .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :9-11
[5]   CHANNELED-SUBSTRATE BURIED-HETEROSTRUCTURE INGAASP/INP LASER WITH SEMIINSULATING OMVPE BASE STRUCTURE AND LPE REGROWTH [J].
WILT, DP ;
LONG, J ;
DAUTREMONTSMITH, WC ;
FOCHT, MW ;
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