A CLOSELY SPACED (50-MU-M) ARRAY OF 16 INDIVIDUALLY ADDRESSABLE BURIED HETEROSTRUCTURE GAAS-LASERS

被引：26

作者：

VANDERZIEL, JP

LOGAN, RA

MIKULYAK, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.93304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9 / 11

页数：3

共 11 条

[1] FABRICATION PROCESSES FOR A SILICON SUBSTRATE PACKAGE FOR INTEGRATED GALLIUM-ARSENIDE LASER ARRAYS [J].

BRADY, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1642-1647

[2] GALLIUM-ARSENIDE LASER-ARRAY ON SILICON PACKAGE [J].

CROW, JD ;

COMERFORD, LD ;

HARPER, JS ;

BRADY, MJ ;

LAFF, RA .

APPLIED OPTICS, 1978, 17 (03) :479-485

[3] SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (11) :2196-2204

[4] GAALAS VISIBLE LASER ARRAYS [J].

KAJIMURA, T ;

YAMASHITA, S ;

KURODA, T ;

NAKAMURA, M ;

UMEDA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) :2181-2181

[5] BURIED-HETEROSTRUCTURE ALGAAS LASERS [J].

SAITO, K ;

ITO, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :205-215

[6] INTEGRATED OUTPUT POWER DETECTION FOR ALGAAS LASER ARRAY [J].

SCIFRES, DR ;

PONCE, FA ;

STUTIUS, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (05) :502-504

[7]

TSANG W, COMMUNICATION

[8] DENSELY PACKED MONOLITHIC LINEAR-ARRAY OF GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASER [J].

TSANG, WT ;

LOGAN, RA ;

SALATHE, RP .

APPLIED PHYSICS LETTERS, 1979, 34 (02) :162-165

[9] THE HIGH-TEMPERATURE (55-DEGREES-C-70-DEGREES-C) DEVICE CHARACTERISTICS OF CW (AIGA)AS DOUBLE-HETEROSTRUCTURE PROTON-BOMBARDED STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT ;

HOLBROOK, WR ;

FRALEY, PE .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :6-9

[10]

VANDERZIEL JP, UNPUB IEEE J QUANTUM

← 1 2 →