FABRICATION PROCESSES FOR A SILICON SUBSTRATE PACKAGE FOR INTEGRATED GALLIUM-ARSENIDE LASER ARRAYS

被引：5

作者：

BRADY, MJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 10期

关键词：

D O I：

10.1149/1.2131263

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1642 / 1647

页数：6

共 19 条

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[3]

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[4]

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BRADY, MJ ;

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[7] GaAs laser array source package [J].

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OPTICS LETTERS, 1977, 1 (01) :40-42

[8]

DAKSS ML, 1975, LASER FOCUS, V12, P31

[9] NEW C-MOS TECHNOLOGY USING ANISOTROPIC ETCHING OF SILICON [J].

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[10]

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