MAXIMUM CONCENTRATION OF IMPURITIES IN SEMICONDUCTORS

被引：23

作者：

SCHUBERT, EF

GILMER, GH

KOPF, RF

LUFTMAN, HS

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.46.15078

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of impurities are shown to limit the attainable maximum impurity concentration in semiconductors. The repulsive interaction between impurities due to (i) the Coulombic charge of ionized impurities and (ii) the increase of electronic energy at high doping concentrations can result in impurity segregation effects that limit the maximum achievable doping concentration. As an example, we consider the doping properties of Be, C, and Zn in GaAs. The characteristics of these impurities at extremely high concentrations agree with Monte Carlo simulations and molecular-dynamics calculations of impurity incorporation during crystal growth, which take into account the repulsive interaction between impurities.

引用

页码：15078 / 15084

页数：7

共 20 条

[1]

[Anonymous], 1981, COMPUTER SIMULATION

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].