SLOW CURRENT TRANSIENTS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：7

作者：

YAO, ZQ ^{[1
]}

DIMITRIJEV, S ^{[1
]}

TANNER, P ^{[1
]}

HARRISON, HB ^{[1
]}

机构：

[1] GRIFFITH UNIV,SCH MICROELECTR ENGN,NATHAN,QLD 4111,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期

关键词：

D O I：

10.1063/1.113150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Glitches of positive current at negative voltages have been observed during current-voltage measurements of metal-oxide semiconductor capacitors. The magnitude of the glitches depends on both stepping rate and duration of holding the metal electrode at the most negative potential before stepping towards positive potentials is initiated. Current versus time measurements show a voltage-dependent time constant, generally >100 ms. Charging/discharging of border traps is suggested as a possible cause for this effect.© 1995 American Institute of Physics.

引用

页码：2510 / 2512

页数：3

共 6 条

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