HIGH-QUALITY ULTRATHIN DIELECTRIC FILMS GROWN ON SILICON IN A NITRIC-OXIDE AMBIENT

被引：72

作者：

YAO, ZQ ^{[1
]}

HARRISON, HB ^{[1
]}

DIMITRIJEV, S ^{[1
]}

SWEATMAN, D ^{[1
]}

YEOW, YT ^{[1
]}

机构：

[1] UNIV QUEENSLAND,DEPT ELECT & COMP ENGN,ST LUCIA,QLD 4072,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality ultrathin silicon oxynitride films (3.5 nm) have been grown in a nitric oxide ambient using rapid thermal processing. The physical and electrical properties of these films are compared with those formed in a nitrous oxide environment. X-ray photoelectron spectroscopy (XPS) results show that the nitric oxide (NO) grown films have a significantly different nitrogen distribution compared to the nitrious oxide (N2O) grown films. The capacitance-voltage and current-voltage characteristics of the NO grown and NO-modified films are, in general, better than those of the same thickness grown in either N2O or O2.

引用

页码：3584 / 3586

页数：3

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