INFLUENCE OF GROWN-IN HYDROGEN ON THERMAL DONOR FORMATION AND OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON-CRYSTALS

被引：15

作者：

HARA, A ^{[1
]}

KOIZUKA, M ^{[1
]}

AOKI, M ^{[1
]}

FUKUDA, T ^{[1
]}

YAMADAKANETA, H ^{[1
]}

MORI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期

关键词：

SILICON; CZOCHRALSKI; HYDROGEN; OXYGEN; THERMAL DONOR; OXYGEN PRECIPITATION; OXYGEN PRECIPITATE;

D O I：

10.1143/JJAP.33.5577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using hydrogen-enhanced thermal donor formation and hydrogen-enhanced oxygen precipitate nuclei formation, we confirmed the presence of hydrogen in as-grown Czochralski (CZ) silicon (Si) ingots. Hydrogen concentrations in as-grown ingots were very low at 2.5 x 10(11) cm(-3). We found that even such a small amount of hydrogen influences the quality of as-grown CZ Si crystals due to hydrogen-enhanced oxygen precipitate nuclei formation caused by in situ, annealing during crystal growth. Reducing hydrogen contamination during crystal growth is important in obtaining high-quality CZ Si crystals.

引用

页码：5577 / 5584

页数：8

共 21 条

[1] ENHANCED THERMAL DONOR FORMATION IN SILICON EXPOSED TO A HYDROGEN PLASMA [J].

BROWN, AR ;

CLAYBOURN, M ;

MURRAY, R ;

NANDHRA, PS ;

NEWMAN, RC ;

TUCKER, JH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :591-593

[2] INTERSTITIAL-O IN SI AND ITS INTERACTIONS WITH H [J].

ESTREICHER, SK .

PHYSICAL REVIEW B, 1990, 41 (14) :9886-9891

[3] HYDROGEN EFFECTS ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON-CRYSTALS [J].

HARA, A ;

AOKI, M ;

FUKUDA, T ;

OHSAWA, A .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :913-916

[4]

HARA A, 1993, 20TH P ULTR CLEAN TE, P110

[5]

HARA A, 1993, 1993 INT C SOL STAT, P1014

[6]

HARA A, 1993, 3TH KOSH KEKK FOR KU, P154

[7]

HARA A, 1992, 1992 INT C SOL STAT, P35

[8]

KOIZUKA M, 1993, SEP AUT M JAP SOC AP

[9]

KOIZUKA M, 1993, MAR SPRING M JAP SOC

[10] CONCENTRATION OF ATOMIC-HYDROGEN DIFFUSED INTO SILICON IN THE TEMPERATURE-RANGE 900-1300-DEGREES-C [J].

MCQUAID, SA ;

NEWMAN, RC ;

TUCKER, JH ;

LIGHTOWLERS, EC ;

KUBIAK, RAA ;

GOULDING, M .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2933-2935

← 1 2 3 →