NEW GROWTH TECHNIQUE FOR LUMINESCENT LAYERS ON SILICON

被引：20

作者：

BRANDT, MS

BREITSCHWERDT, A

FUCHS, HD

HOPNER, A

ROSENBAUER, M

STUTZMANN, M

WEBER, J

机构：

[1] Max-Planck-Institut für Festkörperforschung, Stuttgart 80, W-7000

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 06期

关键词：

D O I：

10.1007/BF00324341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth of siloxene on crystalline silicon (111) surfaces based on the chemical transformation of a calcium disilicide layer. The siloxene films obtained show a prominent luminescence in the green, with intensities comparable to the luminescence observed from porous silicon. The structural properties of the siloxene films are studied with infrared transmission and TEM micrographs.

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页码：567 / 569

页数：3

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