COUPLED PARALLEL WAVEGUIDE SEMICONDUCTOR-LASER

[1] ALLEN LB, 1978, P SOC PHOTOOPTICAL I, V157, P110

[2] BONADMA N, 1982, ELECTRON LETT, V18, P871

[3] SEMICONDUCTOR INTERNAL-REFLECTION-INTERFERENCE LASER [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 571 - 573

[4] SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 6 - 8

[5] HIGHLY RELIABLE AND MODE-STABILIZED OPERATION IN V-CHANNELED SUBSTRATE INNER STRIPE LASERS ON P-GAAS SUBSTRATE EMITTING IN THE VISIBLE WAVELENGTH REGION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7224 - 7234

[6] LONGITUDINAL-MODE CONTROL IN INTEGRATED SEMICONDUCTOR-LASER PHASED-ARRAYS BY PHASE-VELOCITY MATCHING [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 157 - 159

[7] DUAL WAVELENGTH INGAASP INP TJS']JS LASERS [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 18 - 20

[8] CW MULTIWAVELENGTH TRANSVERSE-JUNCTION-STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING PREDOMINANTLY IN SINGLE-LONGITUDINAL MODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 441 - 443

[9] TSANG WT, 1983, APPL PHYS LETT, V42, P650, DOI 10.1063/1.94053

[10] TRANSIENT SINGLE-LONGITUDINAL MODE STABILIZATION IN DOUBLE ACTIVE LAYER GAINASP INP LASER UNDER HIGH-BIT RATE MODULATION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1003 - 1005

[1] ALLEN LB, 1978, P SOC PHOTOOPTICAL I, V157, P110

[2] BONADMA N, 1982, ELECTRON LETT, V18, P871

[3] SEMICONDUCTOR INTERNAL-REFLECTION-INTERFERENCE LASER [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 571 - 573

[4] SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP-INP SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 6 - 8

[5] HIGHLY RELIABLE AND MODE-STABILIZED OPERATION IN V-CHANNELED SUBSTRATE INNER STRIPE LASERS ON P-GAAS SUBSTRATE EMITTING IN THE VISIBLE WAVELENGTH REGION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7224 - 7234

[6] LONGITUDINAL-MODE CONTROL IN INTEGRATED SEMICONDUCTOR-LASER PHASED-ARRAYS BY PHASE-VELOCITY MATCHING [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 157 - 159

[7] DUAL WAVELENGTH INGAASP INP TJS']JS LASERS [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 18 - 20

[8] CW MULTIWAVELENGTH TRANSVERSE-JUNCTION-STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING PREDOMINANTLY IN SINGLE-LONGITUDINAL MODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 441 - 443

[9] TSANG WT, 1983, APPL PHYS LETT, V42, P650, DOI 10.1063/1.94053

[10] TRANSIENT SINGLE-LONGITUDINAL MODE STABILIZATION IN DOUBLE ACTIVE LAYER GAINASP INP LASER UNDER HIGH-BIT RATE MODULATION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (12) : 1003 - 1005