CW MULTIWAVELENGTH TRANSVERSE-JUNCTION-STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING PREDOMINANTLY IN SINGLE-LONGITUDINAL MODES

被引：17

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：441 / 443

页数：3

共 16 条

[1] FREQUENCY-MULTIPLEXING LIGHT-SOURCE WITH MONOLITHICALLY INTEGRATED DISTRIBUTED-FEEDBACK DIODE-LASERS [J].

AIKI, K ;

NAKAMURA, M ;

UMEDA, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (04) :220-223

[2]

CASEY HC, 1968, T METALL SOC AIME, V242, P406

[3] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[4] ALGAAS TJS']JS LASERS WITH VERY LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY [J].

HIRANO, R ;

OOMURA, E ;

IKEDA, K ;

MATSUI, K ;

ISHII, M ;

SUSAKI, W .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :355-358

[5]

IKEDA K, 1977, 1977 INT C IOOC TOK

[6] HIGH-TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS']JS-LASER [J].

KUMABE, H ;

TANAKA, T ;

NAMIZAKI, H ;

ISHII, M ;

SUSAKI, W .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :38-39

[7] GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS [J].

LEE, CP ;

MARGALIT, S ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :410-412

[8] DUAL-BEAM LASER - GAAS DOUBLE-CAVITY LASER WITH BRANCHING OUTPUT WAVEGUIDES [J].

MERZ, JL ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1978, 32 (10) :661-663

[9] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION [J].

NAMIZAKI, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :427-431

[10]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

← 1 2 →