SURFACE STUDIES OF THE THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS (100)

被引：30

作者：

MURRELL, AJ

WEE, ATS

FAIRBROTHER, DH

SINGH, NK

FOORD, JS

DAVIES, GJ

ANDREWS, DA

机构：

[1] UNIV OXFORD,INORGAN CHEM LAB,S PARKS RD,OXFORD OX1 3QR,ENGLAND

[2] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90361-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The adsorption and surface decomposition of triethylgallium (TEG) on GaAs (100) has been studied using XPS and thermal desorption techniques. TEG is found to adsorb in a molecular form on the Ga rich (4×1) surface below 150 K. As the surface temperature is raised, this molecular state dissociates to form Ga and adsorbed ethyl species. The overall cracking reaction occurs in competition with the desorption of TEG and diethylgallium (DEG). Under the conditions of our experiments the adsorbed ethyl species formed above are found to dissociate above 600 K to form mainly gas phase ethene and hydrogen with traces of ethane, resulting in the formation of a pure Ga layer within the sensitivity limits imposed by XPS. © 1990.

引用

页码：199 / 202

页数：4