A MODEL FOR THE SURFACE CHEMICAL-KINETICS OF GAAS DEPOSITION BY CHEMICAL-BEAM EPITAXY

被引：140

作者：

ROBERTSON, A ^{[1
]}

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.342508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：877 / 887

页数：11

共 31 条

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[2] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100)
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[3] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1109 - 1111
[4] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2302 - 2307
[5] TEMPORAL INTENSITY VARIATIONS IN RHEED PATTERNS DURING FILM GROWTH OF GAAS BY MBE
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[J]. VACUUM, 1983, 33 (10-1) : 593 - 596
[6] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &
[7] EVALUATION OF SURFACE KINETIC DATA BY TRANSFORM ANALYSIS OF MODULATED MOLECULAR-BEAM MEASUREMENTS
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[J]. SURFACE SCIENCE, 1974, 44 (01) : 69 - 92
[8] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 490 - 496
[9] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[10] HARRIS JJ, 1981, SURF SCI, V108, pL444, DOI 10.1016/0039-6028(81)90440-4

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