A MODEL FOR THE SURFACE CHEMICAL-KINETICS OF GAAS DEPOSITION BY CHEMICAL-BEAM EPITAXY

被引：140

作者：

ROBERTSON, A ^{[1
]}

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.342508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：877 / 887

页数：11

共 31 条

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[15] MBE GROWTH OF HIGH-QUALITY GAAS USING TRIETHYLGALLIUM AS A GALLIUM SOURCE
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184
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