THICKNESS DEPENDENCE OF ELECTRICAL AND STRUCTURAL-PROPERTIES OF FTO FILMS

被引:10
作者
AMANULLAH, FM
PRATAP, KJ
BABU, VH
机构
[1] Department of Physics, University College of Science, Osmania University, Hyderabad, Andhra Pradesh
关键词
D O I
10.1002/crat.2170260826
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Fluorine (0.8 M) doped tin oxide films of various thicknesses were prepared on heated glass substrates (520-degrees-C) by spray pyrolysis technique. The chemical and thermal stabilities of FTO films were found to be very good. The characterization has been done by XRD and found to agree with the reported results. As thickness of the film increases, intensities of peaks increased. From the X-ray diffraction data, grain size of the crystallites have been calculated. The electrical and structural properties were studied for different thicknesses. Hall measurements showed that thicker films have relatively high Hall mobilities compared to those of thinner films. The high carrier concentration showed that the films are degenerate. The relationship between carrier concentration and Hall mobility revealed that the ionized impurity scattering centres were the dominant cause of scattering.
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页码:1099 / 1105
页数:7
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