POLARITY INVERSION OF CDTE(111) ORIENTATION GROWN ON BI (00.1) BY MOLECULAR-BEAM EPITAXY

被引:20
作者
DIVENERE, A [1 ]
YI, XJ [1 ]
HOU, CL [1 ]
WANG, HC [1 ]
KETTERSON, JB [1 ]
WONG, GK [1 ]
SOU, IK [1 ]
机构
[1] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG
关键词
D O I
10.1063/1.109271
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using in situ reflection high-energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe (111BAR) B terminated surfaces result in (111) A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two-dimensional growth of Bi on CdTe by molecular beam epitaxy.
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页码:2640 / 2642
页数:3
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