POLARITY INVERSION OF CDTE(111) ORIENTATION GROWN ON BI (00.1) BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

DIVENERE, A ^{[1
]}

YI, XJ ^{[1
]}

HOU, CL ^{[1
]}

WANG, HC ^{[1
]}

KETTERSON, JB ^{[1
]}

WONG, GK ^{[1
]}

SOU, IK ^{[1
]}

机构：

[1] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

D O I：

10.1063/1.109271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using in situ reflection high-energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe (111BAR) B terminated surfaces result in (111) A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two-dimensional growth of Bi on CdTe by molecular beam epitaxy.

引用

页码：2640 / 2642

页数：3

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