NON-THERMAL EFFECTS IN LASER-ENHANCED ETCHING OF SILICON BY XEF2

[1] PHOTOELECTROCHEMISTRY AND HETEROGENEOUS PHOTOCATALYSIS AT SEMICONDUCTORS [J]. JOURNAL OF PHOTOCHEMISTRY, 1979, 10 (01): : 59 - 75

[2] BROWN WL, 1980, LASER ELECTRON BEAM

[3] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[4] ROTATIONAL ANALYSIS OF ABSORPTION BANDS IN 2266 A SYSTEM OF SIF2 [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1970, 36 (02) : 192 - &

[5] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[6] HOULE FA, UNPUB

[7] THE BAND SPECTRUM OF SILICON MONOFLUORIDE, SIF [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 476 - 484

[8] JORTNER J, 1963, NOBLE GAS COMPOUNDS

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3919 - 3924

[10] MORRISON SR, 1977, CHEM PHYSICS SURFACE, pCH9

[1] PHOTOELECTROCHEMISTRY AND HETEROGENEOUS PHOTOCATALYSIS AT SEMICONDUCTORS [J]. JOURNAL OF PHOTOCHEMISTRY, 1979, 10 (01): : 59 - 75

[2] BROWN WL, 1980, LASER ELECTRON BEAM

[3] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2614 - 2619

[4] ROTATIONAL ANALYSIS OF ABSORPTION BANDS IN 2266 A SYSTEM OF SIF2 [J]. JOURNAL OF MOLECULAR SPECTROSCOPY, 1970, 36 (02) : 192 - &

[5] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 1018 - 1020

[6] HOULE FA, UNPUB

[7] THE BAND SPECTRUM OF SILICON MONOFLUORIDE, SIF [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (459): : 476 - 484

[8] JORTNER J, 1963, NOBLE GAS COMPOUNDS

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3919 - 3924

[10] MORRISON SR, 1977, CHEM PHYSICS SURFACE, pCH9