SHUBNIKOV DEHAAS EFFECT AND ENERGY-BAND STRUCTURE OF GASB

被引：4

作者：

HAZAMA, H

ITOH, Y

HAMAGUCHI, C

机构：

[1] Osaka Univ, Dep of Electronics,, Suita, Jpn, Osaka Univ, Dep of Electronics, Suita, Jpn

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1985年 / 54卷 / 01期

关键词：

D O I：

10.1143/JPSJ.54.269

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

23

引用

收藏

页码：269 / 277

页数：9

相关论文

共 23 条

[1] QUANTUM THEORY OF LONGITUDINAL MAGNETORESISTANCE
ARGYRES, PN
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 4 (1-2) : 19 - 26
[2] ELECTROREFLECTANCE OF GASB FROM 0.6 TO 26 EV
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4450 - 4458
[3] BENZ G, 1974, 12TH P INT C PHYS SE, P1262
[4] BLAKEMORE J, 1962, SEMICONDUCTOR STATIS, pCH2
[5] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON
BRUST, D
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &
[6] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &
[7] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE
CARDONA, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) : 1543 - &
[8] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[9] EXPERIMENTAL ENERGY-BAND DISPERSIONS, CRITICAL-POINTS, AND SPIN-ORBIT SPLITTINGS FOR GASB USING ANGLE-RESOLVED PHOTOEMISSION
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1980, 22 (06): : 2940 - 2944
[10] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +