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EFFECT OF NONUNIFORM CARRIER DISTRIBUTION ON CHANNEL MOBILITY MEASUREMENT IN METAL/SIO2/SI FIELD-EFFECT TRANSISTORS
被引:5
作者
:
LI, J
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
LI, J
[
1
]
MA, TP
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
MA, TP
[
1
]
机构
:
[1]
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 61卷
/ 04期
关键词
:
D O I
:
10.1063/1.338060
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1664 / 1666
页数:3
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共 2 条
[1]
ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
论文数:
0
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0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
ANDO, T
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
FOWLER, AB
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
STERN, F
[J].
REVIEWS OF MODERN PHYSICS,
1982,
54
(02)
: 437
-
672
[2]
EFFECTS OF DIFFUSION CURRENT ON CHARACTERISTICS OF METAL-OXIDE (INSULATOR)-SEMICONDUCTOR TRANSISTORS
PAO, HC
论文数:
0
引用数:
0
h-index:
0
PAO, HC
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(10)
: 927
-
+
←
1
→