X-RAY-DIFFRACTION FROM SI/GE LAYERS - DIFFUSE-SCATTERING IN THE REGION OF TOTAL EXTERNAL REFLECTION

被引：130

作者：

SCHLOMKA, JP ^{[1
]}

TOLAN, M ^{[1
]}

SCHWALOWSKY, L ^{[1
]}

SEECK, OH ^{[1
]}

STETTNER, J ^{[1
]}

PRESS, W ^{[1
]}

机构：

[1] CHRISTIAN ALBRECHTS UNIV KIEL,INST EXPTL PHYS,D-24098 KIEL,GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.51.2311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper it is shown that diffuse-scattering experiments within the region of total external reflection can be explained quantitatively using the distorted-wave Born approximation for layer systems. Three Si/Ge samples with different degrees of complexity were investigated. The simultaneous analysis of the specular reflected intensity and the diffuse scattering leads to one consistent set of interface and layer parameters, which is able to fit both the shapes and the locations of all dynamic peaks in the off-specular scans and the characteristics of the reflected intensity. Therefore the distorted-wave Born approximation seems to give a correct and complete description of the diffuse scattering in the region of total external reflection. © 1995 The American Physical Society.

引用

页码：2311 / 2321

页数：11

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