ESD - A PERVASIVE RELIABILITY CONCERN FOR IC TECHNOLOGIES

被引:75
作者
DUVVURY, C [1 ]
AMERASEKERA, A [1 ]
机构
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DEVICE DESIGN GRP,DALLAS,TX 75265
关键词
D O I
10.1109/5.220901
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electrostatic discharge (ESD) is considered a major reliability threat to integrated circuit (IC) technologies. A review of the ESD phenomena along with the test methods, the appropriate on-chip protection techniques, and the impact of process technology advances from CMOS to BiCMOS on the ESD sensitivity of IC protection circuits, are presented. The present status of understanding the ESD failure physics and the current approaches for modeling are also discussed This overview paper deals with several aspects of ESD from the point of view of the test, design, product, and reliability engineers.
引用
收藏
页码:690 / 702
页数:13
相关论文
共 46 条
  • [1] CHARACTERIZATION AND MODELING OF 2ND BREAKDOWN IN NMOSTS FOR THE EXTRACTION OF ESD-RELATED PROCESS AND DESIGN PARAMETERS
    AMERASEKERA, A
    VANROOZENDAAL, L
    BRUINES, J
    KUPER, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) : 2161 - 2168
  • [2] ESD FAILURE MODES - CHARACTERISTICS, MECHANISMS, AND PROCESS INFLUENCES
    AMERASEKERA, A
    VANDENABEELEN, W
    VANROOZENDAAL, L
    HANNEMANN, M
    SCHOFIELD, P
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (02) : 430 - 436
  • [3] AMERASEKERA A, 1990, 12TH P EOS ESD S, P143
  • [4] AMERASEKERA A, 1992, 14TH P EOS ESD S
  • [5] AUR S, 1988, P IRPS
  • [6] AVERY L, 1983, EOS ESD S P, P177
  • [7] AVERY L, 1985, EOS ESD S
  • [8] CHATTERJEE A, 1991, EIDM, P913
  • [9] CHATTERJEE A, 1990, P VLSI TECH S
  • [10] CHEN KL, 1986, IEDM