Resonant Rayleigh scattering in semiconductor structures.

被引：1

作者：

Gurioli, M

Bogani, F

Vinattieri, A

Colocci, M

Belitsky, VI

Cantarero, A

Pavlov, ST

机构：

[1] LENS, UNITA INFM, I-50125 FLORENCE, ITALY

[2] UNIV VALENCIA, DEPT FIS APLICADA, E-46100 VALENCIA, SPAIN

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期

关键词：

D O I：

10.1007/BF02457231

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We conclude that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk crystals turn out to be better candidates for RRS via propagating states.

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收藏

页码：1487 / 1492

页数：6

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