ENERGY-DEPENDENCE OF PROTON DISPLACEMENT DAMAGE FACTORS FOR BIPOLAR-TRANSISTORS

被引：32

作者：

SUMMERS, GP

WOLICKI, EA

XAPSOS, MA

MARSHALL, P

DALE, CJ

GEHLHAUSEN, MA

BLICE, RD

机构：

[1] WOLICKI ASSOCIATES INC,ALEXANDRIA,VA 22307

[2] USN,CTR WEAPONS SUPPORT,CRANE,IN 47522

[3] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1282 / 1286

页数：5

共 7 条

[1]

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[2] THE DAMAGE EQUIVALENCE OF ELECTRONS, PROTONS, AND GAMMA-RAYS IN MOS DEVICES [J].

BRUCKER, GJ ;

STASSINOPOULOS, EG ;

VANGUNTEN, O ;

AUGUST, LS ;

JORDAN, TM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1966-1969

[3]

BURKE EA, 1986, UNPUB IEEE T NUCL SC

[4]

de Lafond Y. G., 1969, THESIS U TOULOUSE

[5]

LARIN F, 1968, RAD EFFECTS SEMICOND, pCH9

[6]

MESSENGER GC, 1958, P IRE, V46, P1036

[7] IONIZATION OF SIO2 BY HEAVY CHARGED-PARTICLES [J].

OLDHAM, TR ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :3975-3980

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