MEASUREMENT OF DIFFERENTIAL GAIN AND LINEWIDTH ENHANCEMENT FACTOR OF 1.5-MU-M STRAINED-QUANTUM-WELL ACTIVE LAYERS

被引：17

作者：

KIKUCHI, K ^{[1
]}

AMANO, M ^{[1
]}

ZAH, CE ^{[1
]}

LEE, TP ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期

关键词：

D O I：

10.1109/3.283805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The differential gain a and the linewidth enhancement factor alpha of 1.5-mu strained quantum-well active layers were measured as functions of the carrier density and the wavelength. Both a and alpha of compressively strained multiple-quantum-well (CS-MQW) active layers reveal a carrier-density dependence which is stronger than that of unstrained multiple-quantum-well (MQW) and tensile-strained single-quantum-well (TS-SQW) active layers. The improvement in these parameters is achieved only when the carrier density is low. On the other hand, in the case of TS-SQW active layers, the carrier density dependence is much smaller, and the differential gain is improved significantly.

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页码：571 / 577

页数：7

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