HOT-ELECTRON DIFFUSION NOISE IN N-SILICON USING A RADIOMETRIC METHOD IN X-BAND REGION

被引：9

作者：

ZIMMERMANN, J ^{[1
]}

BONFILS, S ^{[1
]}

LEROY, Y ^{[1
]}

CONSTANT, E ^{[1
]}

机构：

[1] UNIV SCI & TECH,CTR HYPERFREQUENCES & SEMICOND,CNRS 454,EQUIP RECH,F-59650 VILLENE UNE DASCQ,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 05期

关键词：

D O I：

10.1063/1.89351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：245 / 247

页数：3

共 12 条

[1] DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD [J].

BARTELIN.DJ ;

PERSKY, G .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :191-&

[2] ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J].

CANALI, C ;

MAJNI, G ;

MINDER, R ;

OTTAVIANI, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1045-1047

[3] ELECTRON DRIFT VELOCITY IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

NAVA, F ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284

[4] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

APPLIED PHYSICS LETTERS, 1975, 27 (05) :278-280

[5] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES [J].

CONSTANT, E ;

MIRCEA, A ;

PRIBETICH, J ;

FARRAYRE, A .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3934-3940

[6] THE MEASUREMENT OF THERMAL RADIATION AT MICROWAVE FREQUENCIES [J].

DICKE, RH .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1946, 17 (07) :268-275

[7]

MIRCEA A, 1976, THESIS PARIS

[8]

NOUGIER JP, 1972, THESIS MONTPELLIER

[9]

ROLLAND M, 1975, THESIS MONTPELLIER

[10]

Shockley W., 1966, QUANTUM THEORY ATOMS

← 1 2 →