RADIATION-ENHANCED DIFFUSION OF BORON IN SILICON

Boron was predeposited in silicon substrates by conventional diffusion techniques and then redistributed by bombarding the substrates with 10- and 50-keV protons. The substrates were held at a fixed temperature in the range 500 to 700°C for the duration of the bombardment. The resulting impurity profiles were determined. The low-energy impurity profiles are characterized by very abrupt junctions while the high-energy impurity profiles are characterized by long tails. No variation of either the 10- or the 50-keV impurity profiles with temperature was seen over the range given above. © 1969 The American Institute of Physics.