ULTRALOW POWER OPTICAL INTERCONNECT WITH ZERO-BIASED, ULTRALOW THRESHOLD LASER - HOW LOW A THRESHOLD IS LOW ENOUGH

被引：35

作者：

CUTRER, DM

LAU, KY

机构：

[1] Department of EECS. Cory Hall. Box 103. University of California at Berkeley, Berkeley

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.363394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultralow threshold (I-th < 100 mu A) lasers can be used in ultralow power optical interconnect, preferably in a bias-free digital optical modulation format. We show that even though optical power requirements for successful transmission may dictate that the pulse drive current be many times that of I-th, reducing the latter to 10-100 mu A is still essential in minimizing the total driver power to the laser at multi-gigabit data rates.

引用

收藏

页码：4 / 6

页数：3

相关论文

共 7 条

[1] POWER PENALTY DUE TO DECISION-TIME JITTER IN OPTICAL COMMUNICATION-SYSTEMS [J].

AGRAWAL, GP ;

SHEN, TM .

ELECTRONICS LETTERS, 1986, 22 (09) :450-451

[2] STRAINED SINGLE-QUANTUM-WELL INGAAS LASERS WITH A THRESHOLD CURRENT OF 0.25 MA [J].

CHEN, TR ;

ENG, LE ;

ZHAO, B ;

ZHUANG, YH ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2621-2623

[3] HIGH-SPEED DIGITAL MODULATION OF ULTRALOW THRESHOLD (LESS-THAN 1 MA) GAAS SINGLE QUANTUM-WELL LASERS WITHOUT BIAS [J].

LAU, KY ;

BARCHAIM, N ;

DERRY, PL ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1987, 51 (02) :69-71

[4] RECORD LOW-THRESHOLD CURRENT IN MICROCAVITY SURFACE-EMITTING LASER [J].

NUMAI, T ;

KAWAKAMI, T ;

YOSHIKAWA, T ;

SUGIMOTO, M ;

SUGIMOTO, Y ;

YOKOYAMA, H ;

KASAHARA, K ;

ASAKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10B) :L1533-L1534

[5] HIGH-SPEED OPERATION OF STRAINED INGAAS/INGAASP MQW LASERS UNDER ZERO-BIAS CONDITION [J].

ODAGAWA, T ;

NAKAJIMA, K ;

TANAKA, K ;

NOBUHARA, H ;

INOUE, T ;

OKAZAKI, N ;

WAKAO, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1682-1686

[6] PARAMETRIC DEPENDENCE OF TIMING JITTER IN GAIN-SWITCHED SEMICONDUCTOR-LASERS [J].

PEPELJUGOSKI, PK ;

CUTRER, DM ;

LAU, KY .

APPLIED PHYSICS LETTERS, 1993, 63 (26) :3556-3558

[7] POWER PENALTY DUE TO JITTER ON OPTICAL COMMUNICATION-SYSTEMS [J].

SCHUMACHER, K ;

OREILLY, JJ .

ELECTRONICS LETTERS, 1987, 23 (14) :718-719