CHARACTERIZATION OF AU-N-INP SCHOTTKY DIODES BY EBIC

被引：7

作者：

PERANSIN, JM

DASILVA, BEF

BRESSE, JF

机构：

[1] Univ des Sciences et Techniques du, Languedoc, Montpellier, Fr, Univ des Sciences et Techniques du Languedoc, Montpellier, Fr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 02期

关键词：

SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;

D O I：

10.1002/pssa.2210940236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a multi-layer model, an analytical expression is derived for electron-beam-induced current (EBIC) at a Schottky barrier diode perpendicular to the bombarded surface. Experimental results for the energy dependence of EBIC is presented in Au-n-InP diodes on epitaxial layer and bulk substrate. Comparison of theory and experiment provides values for the thickness of various characteristic regions inside the junction and estimates of diffusion length of excess carriers.

引用

页码：713 / 718

页数：6

共 9 条

[1]

BRESSE JF, 1977, SCANNING ELECTRON 1, P483

[2] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[3] PENETRATION AND ENERGY-LOSS THEORY OF ELECTRONS IN SOLID TARGETS [J].

KANAYA, K ;

OKAYAMA, S .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (01) :43-&

[4] THE ENERGY OF ELECTRON-HOLE PAIR FORMATION BY X-RAYS IN PBO [J].

LAPPE, F .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) :173-176

[5] ELECTRON-BEAM MEASUREMENTS OF MINORITY-CARRIER LIFETIME DISTRIBUTIONS IN ION-BEAM-DAMAGED SILICON [J].

POSSIN, GE ;

KIRKPATRICK, CG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4033-4041

[6] RECOMBINATION IN HEAVILY DOPED PLANAR DIODES [J].

POSSIN, GE ;

KIRKPATRICK, CG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3478-3483

[7] BACKSCATTERING OF KILOVOLT ELECTRONS FROM SOLIDS [J].

STERNGLASS, EJ .

PHYSICAL REVIEW, 1954, 95 (02) :345-358

[8] INVESTIGATION OF MINORITY-CARRIER DIFFUSION LENGTHS BY ELECTRON-BOMBARDMENT OF SCHOTTKY BARRIERS [J].

WU, CJ ;

WITTRY, DB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2827-2836

[9]

[No title captured]

← 1 →