ATOMIC SITES OF A BARE SURFACE MODIFIED WITH THE TUNNELING MICROSCOPE

被引:42
作者
FUCHS, H [1 ]
SCHIMMEL, T [1 ]
机构
[1] BASF AG,POLYMER RES LAB,W-6700 LUDWIGSHAFEN,GERMANY
关键词
D O I
10.1002/adma.19910030212
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Research News: The reproducible direct labeling of atomic sites on a semiconductor surface at room temperature and under ambient conditions has recently been reported for the first time. The STM method used, which results in an increase in the apparent height of the atomic positions but not in the formation of other defects such as dislocations, could have significant technological relevance, for example for the storage of digital information on the atomic scale.
引用
收藏
页码:112 / 113
页数:2
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