NEW PHENOMENA IN HOMOEPITAXIAL GROWTH OF METALS

被引:100
作者
POELSEMA, B
KUNKEL, R
NAGEL, N
BECKER, AF
ROSENFELD, G
VERHEIJ, LK
COMSA, G
机构
[1] Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, Jülich, W-5170
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 05期
关键词
D O I
10.1007/BF00348149
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth of Pt(111) by Pt vapour deposition is studied by He diffraction as a function of substrate temperature and deposition rate. At a deposition rate of about 2.5 x 10(-2) monolayers/second several growth modes are observed: layer-by-layer (2D-) growth at 450 K less-than-or-similar-to T(s) less-than-or-similar-to 800 K, multilayer (3D-) growth at 340 K less-than-or-similar-to T(s) less-than-or-similar-to 450 K and reentrant layer-by-layer (2D-) growth at T(s) less-than-or-similar-to 340 K. The observed growth modes and in particular the reentrant 2D-growth are shown to be characteristic of growing Pt(111) under clean conditions, i.e. not influenced by contaminants. The influence of the intra- and interlayer mass transport on the growth mode is discussed in the light of experimental and simulation results. The 3D-growth mode is attributed to the existence of an activation barrier which suppresses the descent of adatoms from the top of the growing adatom islands onto the lower terraces. The barrier can be overcome by thermal adatoms at T(s) greater-than-or-similar-to 450 K enabling interlayer mass transport which leads to 2D-growth. The reentrant 2D-growth occurs due to a break down of this barrier for small, irregularly shaped islands.
引用
收藏
页码:369 / 376
页数:8
相关论文
共 28 条