THE PHENOMENA OF PHOTOCONDUCTIVITY AND LONG-TERM PHOTORELAXATION IN INDIUM SELENIDE THIN-FILMS

被引：3

作者：

BANERJEE, NK

CHAUDHURI, AK

SAMANTARAY, BK

机构：

[1] Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 10期

关键词：

D O I：

10.1088/0022-3727/26/10/024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The variation of photoconductivity with temperature and long-term photorelaxation under weak and moderate illuminations in polycrystalline InSe thin films are studied. Different decay characteristics are determined and it is found that separate barriers are responsible for drift and recombination. The long-term photodecay is found to be exponential with time for weak illumination. The photosensitivity of the films is also determined and its variation with temperature is studied.

引用

页码：1714 / 1717

页数：4

共 14 条

[1]

ABDINOV AS, 1975, SOV PHYS SEMICOND+, V9, P1113

[2] OPTICAL-PROPERTIES AND PHOTO-VOLTAIC DEVICE APPLICATIONS OF INSE FILMS [J].