MEASUREMENT OF MOS CURRENT MISMATCH IN THE WEAK INVERSION REGION

被引：56

作者：

FORTI, F ^{[1
]}

WRIGHT, ME ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB, DEPT ENGN, BERKELEY, CA 94720 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 02期

关键词：

D O I：

10.1109/4.272119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the current matching properties of MOS transistors operated in the weak inversion region. We measured a total of about 1400 PMOS and NMOS transistors produced in four different processes and report here the results in terms of mismatch dependence on current density, device dimensions, and substrate voltage, without using any specific model for the transistor.

引用

页码：138 / 142

页数：5

共 6 条

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