DIMENSIONAL REDUCTION OF GAAS QUANTUM-WELL CUT BY DISLOCATION SLIP OBSERVED BY PHOTOLUMINESCENCE

被引：11

作者：

GOIRAN, M ^{[1
]}

GUASCH, C ^{[1
]}

VOILLOT, F ^{[1
]}

CARLES, R ^{[1
]}

PEYRADE, JP ^{[1
]}

BEDEL, E ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] CNRS,LAAS,F-31077 TOULOUSE,FRANCE

来源：

EUROPHYSICS LETTERS | 1993年 / 23卷 / 09期

关键词：

D O I：

10.1209/0295-5075/23/9/005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dislocation slip properties are used in order to generate quasi-one-dimensional structures with sharp lateral confinement by cutting 5 nm GaAs quantum wells grown by molecular-beam epitaxy on (001) GaAs substrates. The photoluminescence (PL) spectra of three samples obtained in different experimental conditions are presented. The PL spectra of two samples representing the smallest wire size (congruent-to 25 nm) exhibit a blue shift of 9 meV in very good agreement with theoretical predictions. The intensity and the FWHM of the spectra are discussed and the problem of residual stress induced by the deformation technique is approached.

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页码：647 / 652

页数：6

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