NEW FULL-VOLTAGE-SWING BICMOS BUFFERS

被引：13

作者：

EMBABI, SHK ^{[1
]}

BELLAOUAR, A ^{[1
]}

ELMASRY, MI ^{[1
]}

HADAWAY, RA ^{[1
]}

机构：

[1] NO TELECOM ELECT LTD,NEPEAN K2H 8V4,ONTARIO,CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/4.68131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief paper we present new BiCMOS circuits which offer near rail-to-rail output voltage swing. Hence, they offer higher noise margins and higher speed of operation at scaled-down power supply voltages. The circuits are simulated and compared to BiCMOS and CMOS buffers.

引用

页码：150 / 153

页数：4

共 10 条

[1]

Bellaouar A., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P437, DOI 10.1109/IEDM.1989.74316

[2]

ELMASRY MI, 1982, IEEE J SOLID STATE C, V17, P779

[3]

EMBABI SHK, FULL VOLTAGE SWING B

[4] PERSPECTIVE ON BICMOS VLSIS [J].