PHOTOCONDUCTOR AND ELECTRODE REQUIREMENTS FOR THIN-FILM FERROELECTRIC/PHOTOCONDUCTOR MEMORY DEVICE

被引：6

作者：

SHARMA, BS

MEHTA, RR

机构：

来源：

关键词：

D O I：

10.1080/00150197208235312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：225 / &

共 14 条

[1]

Bube R.H., 1960, Photoconductivity of Solids

[2]

CHAPMAN DW, 1970, IEEE COMPUTER C P WA

[3] SURFACE PROPERTIES OF CADMIUM SELENIDE [J].

CONSIGNY, RL ;

MADIGAN, JR .

[4]

HENISCH HK, 1950, RECTIFYING SEMICONDU

[5] STORAGE OF HOLOGRAMS IN A FERROELECTRIC-PHOTOCONDUCTOR DEVICE [J].

KENEMAN, SA ;

TAYLOR, GW ;

MILLER, A ;

FONGER, WH .

MALDONADO, JR ;

MEITZLER, AH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (03) :368-+

MEAD, CA .

[8]

MEHTA RR, 1971, J APPL PHYS, V42

[9]

MEHTA RR, TO BE PUBLISHED

[10]

Rose A., 1963, CONCEPTS PHOTOCONDUC