SURFACE PROPERTIES OF CADMIUM SELENIDE

被引：12

作者：

CONSIGNY, RL

MADIGAN, JR

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 02期

关键词：

D O I：

10.1016/0038-1101(70)90041-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：113 / &

相关论文

共 14 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[2] ANISOTROPIC SURFACE BARRIERS ON CDSE
CONSIGNY, RL
MADIGAN, JR
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (01) : 189 - &
[3] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[5] EVALUATION OF SURFACE STATES AT SI-SIO2 INTERFACE FROM CHARACTERISTICS OF P-TYPE MOS DIODES
HORIUCHI, S
YAMAGUCH.J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (08) : 613 - &
[6] KEHOVEC K, 1963, PHYS STATUS SOLIDI, V3, P447
[7] SURFACE STATES ON (0001) FACES OF CADMIUM SULPHIDE CRYSTALS
MANY, A
KATZIR, A
[J]. SURFACE SCIENCE, 1967, 6 (02) : 279 - &
[8] SURFACE STATES ON SEMICONDUCTOR CRYSTALS - BARRIERS ON CD(SE-S) SYSTEM
MEAD, CA
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 103 - &
[9] SAH CT, PRIVATE COMMUNICATIO
[10] SAH CT, 1964, 1 U ILL SOL ST EL LA