EVALUATION OF SURFACE STATES AT SI-SIO2 INTERFACE FROM CHARACTERISTICS OF P-TYPE MOS DIODES

被引：4

作者：

HORIUCHI, S

YAMAGUCH.J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1965年 / 4卷 / 08期

关键词：

D O I：

10.1143/JJAP.4.613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：613 / &

相关论文

共 4 条

[1] GROVE AS, 1964, J APPL PHYS, V35, P447
[2] EVALUATION OF SURFACE STATE AT OXIDIZED SILICON FROM CHARACTERISTICS OF SURFACE VARACTOR DIODE
HORIUCHI, S
YAMAGUCHI, J
SHIBATA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (06) : 394 - +
[3] SEMICONDUCTOR SURFACE VARACTOR
LINDNER, R
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03): : 803 - +
[4] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 285 - 299