SELF-CONSISTENT CALCULATION OF INTERVALLEY DEFORMATION POTENTIALS IN GAAS AND GE

We use the ab initio tight-binding method with ad-hoc site diagonal potentials to calculate electronic and structural properties of semiconductors. By distorting the lattice to simulate L or X phonons, intervalley deformation potentials, D, for electron and hole transfer in GaAs and Ge are obtained self-consistently. In most cases, self-consistency increases the value of D by only about 10%. The values obtained, however, are larger than those from fitted tight-binding or empirical pseudopotential methods and in good agreement with recent experiments.