CALCULATION OF THE GAMMA-DELTA ELECTRON-PHONON AND HOLE-PHONON MATRIX-ELEMENTS IN SILICON

被引:26
作者
BEDNAREK, S
ROSSLER, U
机构
关键词
D O I
10.1103/PhysRevLett.48.1296
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1296 / 1296
页数:1
相关论文
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[3]   ANALYSIS OF DERIVATIVE SPECTRUM OF INDIRECT EXCITON ABSORPTION IN SILICON [J].
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