ANALYSIS OF DERIVATIVE SPECTRUM OF INDIRECT EXCITON ABSORPTION IN SILICON

被引：39

作者：

NISHINO, T ^{[1
]}

TAKEDA, M ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN SCI, TOYONAKA, OSAKA, JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 12卷 / 11期

关键词：

D O I：

10.1016/0038-1098(73)90129-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1137 / 1140

页数：4

共 14 条

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